Agata Krywko-Cendrowska

Electrochemical deposition of Si based layers from 0.1M TBAB/PC
on platinum, gold and copper electrodes

Agata Krywko – Cendrowska, L. Marot,
Supervisor: dr. hab. Marek Szklarczyk (UW)

The aim of the project was to study the process of electrochemical deposition of silicon based films on gold, platinum and copper surfaces.
Si based layers were obtained under potentiostatic conditions in the potential range from - 2.85 to -2.25V vs. Ag. Raman, IR and XPS results show that films consist of Si, SiO_x (0 The thickness of the deposits on Au and Pt was controlled by concentration of silicon salt (1- 3µm), whereas on Cu electrode the decisive factors were both the silicon salt’s concentration and potential value. The deposit’s thickness on Cu ranged between 4 and 24µm. The photactivity of such deposits shows mostly n-type behaviour, however there were cases when p-type behaviour was observed as well depending on the concentration of silicon salt. The density of registered photocurrent was in the range between 1 and 2µA/cm².

Chairman - prof. Blanchard

Discussion